features low saturation voltage: v ce (sat) =0.5v(max)(i c =1a). high speed switching time: tstg = 1.0 s(typ.). small flat package. pc = 1.0 to 2.0 w absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 2a base current i b 0.4 a p c 500 mw p c *1 1000 mw junction temperature tj 150 storage temperature range t stg -55to+150 *1 mountedonceramicsubstrate(250mm 2 x 0.8 t) collector power dissipation 2 s c 2 8 7 3 (mounted on ceramic substrate) product specification sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
h fe classification marking mo my rank o y hfe 70 140 120 240 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v ceo i c =10ma,i b =0 50 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a v ce =2v,i c = 0.5 a 70 240 v ce =2v,i c =2.0a 20 collector-emitter saturation voltage v ce (sat) i c =1a,i b =0.05a 0.5 v base-emitter saturation voltage v be (sat) i c =1a,i b =0.05a 1.2 v collector output capacitance c ob v cb =10v,i e = 0, f = 1 mhz 30 pf turn-on time t on 0.1 s storage time t stg 1.0 s fall time t f 0.1 s transition frequency f t v ce =2v,i c = 0.5 a 120 mhz dc current gain h fe 2 s c 2 8 7 3 product specification sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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